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P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source

Published online by Cambridge University Press:  21 February 2011

Z. Yang ,
L.K. Li  and
W.I. Wang
Z. Yang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
L.K. Li
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
W.I. Wang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
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Abstract

The electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, the Mg-doped GaN films grown by MBE using ammonia exhibited properties that were different from similar films grown by metal-organic chemical vapor deposition (MOCVD). It has been found that the introduction of positive charges during growth is important in the achievement of p-type Mg-doped GaN grown by MBE using ammonia. With the introduction of a moderate nitrogen plasma, we have achieved p-type Mg-doped GaN films with a hole density of 4×1017 cm−3 and a mobility of 15 cm2/V-s at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 169
Copyright
Copyright © Materials Research Society 1996

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References

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