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p-type in ZnO:N by codoping with Cr

Published online by Cambridge University Press:  01 February 2011

E. Kaminska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Piotrowska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
J. Kossut
Affiliation:
Institute of Physics, Polish Academy of Sciences, and ERATO Semiconductor Spintronics Project, al. Lotnikow 32/46, 02–668 Warszawa, Poland
R. Butkute
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
W. Dobrowolski
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
K. Golaszewska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
R. Jakiela
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
E. Dynowska
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
E. Przezdziecka
Affiliation:
Institute of Physics, Polish Academy of Sciences, and ERATO Semiconductor Spintronics Project, al. Lotnikow 32/46, 02–668 Warszawa, Poland
D. Wawer
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
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Abstract

We report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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