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P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach
Published online by Cambridge University Press: 10 February 2011
Abstract
The results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.
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- Copyright © Materials Research Society 1997
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