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Protocrystalline Silicon for Micromorph Tandem Cells on Gen. 5 Size

Published online by Cambridge University Press:  01 February 2011

Gijs van Elzakker
Affiliation:
gijs.vanelzakker@inventux.com, Inventux Technologies AG, Berlin, Germany
Daniel Sixtensson
Affiliation:
daniel.sixtensson@inventux.com, Inventux Technologies AG, Berlin, Germany
Niklas Papathanasiou
Affiliation:
niklas.papathanasiou@inventux.com, Inventux Technologies AG, Berlin, Germany
Klaus Neubeck
Affiliation:
klaus.neubeck@inventux.com, Inventux Technologies AG, Berlin, Germany
Roland Sillmann
Affiliation:
roland.sillmann@inventux.com, Inventux Technologies AG, Berlin, Germany
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Abstract

Inventux Technologies AG is a high volume producer of Micromorph (a-Si:H/μc-Si:H) tandem modules. The light-induced degradation of hydrogenated amorphous silicon (a-Si:H), called Staebler-Wronski effect (SWE), limits the stabilized efficiency of a-Si:H-based solar cells. Several laboratories have reported on the development of a-Si:H with increased resistance against light-soaking. This so-called ‘protocrystalline' silicon can be grown with plasma-enhanced chemical vapor deposition (PECVD) by diluting the silane source gas with hydrogen.

The aim of the work presented in this paper was to scale-up the laboratory results on protocrystalline silicon to a size of 1.43 m2 (Gen. 5) using a process that is suitable for high volume production. We demonstrate that the strict boundary conditions regarding uniformity and growth rate, which are necessary for a production process, can be met. The reduced light-induced degradation of protocrystalline solar cells fabricated with the newly developed process is confirmed by a light-soaking experiment. As an outlook towards future work, we discuss issues related to the implementation of a protocrystalline top cell in the Micromorph tandem configuration. The challenge of choosing the right top-cell thickness is illustrated by experimental results on two tandem cells. The top cells of these tandems contain protocrystalline i-layers of different thicknesses.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Yang, L. and Chen, L. in Amorphous Silicon Technology–1994, edited by Eric Schiff, A., Michael Hack, Arun Madan, Martin Powell, Akihisa Matsuda (Mater. Res. Soc. Symp. Proc. Volume 336, Pittsburgh, PA, 1994) pp. 669–674.Google Scholar
2 Elzakker, G. van, Šutta, P. and Zeman, M., in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2009, edited by Flewitt, A., Wang, Q., Hou, J., Uchikoga, S., Nathan, A. (Mater. Res. Soc. Symp. Proc. Volume 1153, Warrendale, PA, 2009) p. A1802.Google Scholar
3http://www.simkopp.de/rvm/ (Neither the authors of this paper nor the Materials Research Society warrants or assumes liability for the content or availability of this URL.)Google Scholar
4 Chaudhuri, P., Ray, S., Batabyal, A. K., and Barua, A. K., Solar Cells 31, p. 13 (1991).CrossRefGoogle Scholar

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