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Protein Adsorption on the Surface Functionalized Planar Si

Published online by Cambridge University Press:  26 February 2011

Li-Lin Tay
Affiliation:
lilin.tay@nrc-cnrc.gc.ca, National Research Council, Building M-50, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6, Canada
Nelson Rowell
Affiliation:
nelson.rowell@nrc-cnrc.gc.ca, National Research Council, Canada
Rabah Boukherroub
Affiliation:
rabah.boukherroub@iemn.univ-lille1.fr, France
David Lockwood
Affiliation:
david.lockwood@nrc.gc.ca, Canada
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Abstract

The peak energy of photoluminescence (PL) from an undecylenic acid functionalized porous Si demonstrated a large PL red-shift (∼ 75 nm) during 2.5 hours of protein incubation in our previous work. [1] Here we present a similar in-situ PL study of surface functionalized planar Si (Si:COOH). The PL of Si:COOH exhibited a 5 nm red-shift in its peak frequency and an approximately 10% drop in its intensity after incubation in a protein solution. Vibrational spectroscopic characterization was carried out upon the Si:COOH sample for which we observed the PL red-shift. The infrared absorption spectra showed clear evidence of protein adsorption on Si:COOH. This correlation study between the PL peak energy and the vibrational spectrum provided strong evidence that the observed red-shift was due to the formation of semiconductor-protein (Si:COOH:BSA) complexes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Tay, L., Rowell, N. R., Boukherroub, R., Lockwood, D. J., J. Vacuum Sci. Tech. A, submitted (2005)Google Scholar
2 Lin, V.S.Y. Motesharei, K., Dancil, K.P. S., Sailor, M.J., Ghadiri, M. R., Science 278, 840 (1997).Google Scholar
3 Chan, S., Horner, S.R., Miller, B.L., Fauchet, P.M., Mat. Res. Soc. Symp. Proc. 638, F10.4.1 (2001)Google Scholar
4 Tay, L., Rowell, N., Lockwood, D.J., Boukherroub, R., Proc. SPIE, 5578, 99, 2004 Google Scholar
5 Boukherroub, R., Wojtyk, J.T.C., Wayner, D. D. M., Lockwood, D.J., J. Electrochem. Soc., 149, H59(2002)Google Scholar
6 Sailor, M. J., Lee, E. J., Adv. Mat., 9, 783 (1997).Google Scholar
7 Tay, L., Rowell, N. L., Boukherroub, R., Lockwood, D. J., J. Vacuum Sci. Tech. A, submitted (2005)Google Scholar
8 Seker, F., Meeker, K., Kuech, T. F., Ellis, A.B., Chem. Rev., 100, 2505 (2000).Google Scholar
9 Rochat, N., Chabli, A., Bertin, F., Olivier, M., Vergnaud, C., and Mur, P., J. Appl. Phys. 91, 5029 (2002).Google Scholar
10 Milosevic, M., Berets, S.L., and Fadeev, A.Y., Appl. Spectro. 57, 724 (2004).Google Scholar