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Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Mitsuru Funato
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
Yoshinobu Kawaguchi
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
Shigeo Fujita
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
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Abstract

The dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells
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