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Processing of rare earth doped GaN with ion beams

Published online by Cambridge University Press:  01 February 2011

K. Lorenz
Affiliation:
Instituto Tecnológico e Nuclear, EN10, 2686–953 Sacavém, Portugal
U. Wahl
Affiliation:
Instituto Tecnológico e Nuclear, EN10, 2686–953 Sacavém, Portugal
E. Alves
Affiliation:
Instituto Tecnológico e Nuclear, EN10, 2686–953 Sacavém, Portugal
T. Wojtowicz
Affiliation:
LERMAT, FRE 2149, CNRS-ENSICAEN, 1450 Caen, France
P. Ruterana
Affiliation:
LERMAT, FRE 2149, CNRS-ENSICAEN, 1450 Caen, France
S. Dalmasso
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
R. W. Martin
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
K. P. ÒDonnell
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
S. Ruffenach
Affiliation:
GES, Université de Montpellier II, 34095 Montpellier, France
O. Briot
Affiliation:
GES, Université de Montpellier II, 34095 Montpellier, France
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysica, KULeuven, 3001 Leuven, Belgium
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Abstract

GaN epilayers grown by MOCVD were implanted with different fluences of thulium at room temperature and at 500 °C in order to find the optimum implantation conditions. Rutherford backscattering spectrometry in the channeling mode was used to monitor the damage evolution in the Ga-sublattice and to establish the lattice site location of the thulium ions. The nature of structural defects was studied with transmission electron microscopy and the optical properties of the samples with room temperature cathodoluminescence. The introduced damage could be significantly reduced by implantation at high temperature for fluences up to 5×1015 Tm/cm2. Annealing was necessary for optical activation of the implanted samples, in all cases. After annealing, sharp rare earth related emissions were observed in the blue and in the near infra-red spectral region.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[1] Monteiro, T., Soares, J., Correia, M.R., Alves, E., J. Appl. Phys. 89, 6183 (2001).CrossRefGoogle Scholar
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[8] Pipeleers, B., Hogg, S.M. and Vantomme, A., Nucl. Instr. Meth. B 206, 95 (2003).CrossRefGoogle Scholar
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[10] Lorenz, K., PhD. Thesis, University of Bonn, 2002 Google Scholar

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