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Processing and the Microstructure of SrTiO3-Based Bl Capacitors using Pb(Fe, W)O3 Ferroelectrics

Published online by Cambridge University Press:  21 February 2011

Makoto Kuwabara*
Department of Applied Chemistry, Faculty of Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, 804 Japan
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A preliminary experiment was conducted to prepare semiconducting strontium titanate-based internal barrier layer capacitors with ferroelectric Pb(Fe, W)O3 forming insulating layers along the grain boundaries. Processing, microstructure and the dielectric properties of this new type of BL capacitors are described. The idea to obtain this type of BL capacitors with a very high dielectric constant may be realized when the ferroelectric materials can uniformly be diffused along the grain boundaries by using a more sophisticated processing of the second firing.

Research Article
Copyright © Materials Research Society 1989

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