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Process Integration of Composite High-k Tunneling Dielectric for Nanocrystal Based Carbon Nanotube Memory

Published online by Cambridge University Press:  01 February 2011

Udayan Ganguly ,
Tuo-Hung Hou  and
Edwin Chihchuan Kan
Udayan Ganguly
Affiliation:
ug23@cornell.edu, Applied Materials, Applications Development Center, 974 E Arques Ave B81, Sunnyvale, CA, 94085, United States, 614-598-2339, 408-584-1194
Tuo-Hung Hou
Affiliation:
th273@cornell.edu, Cornell University, Electrical and Computer Engr, 323 Phillips Hall Cornell University, Ithaca, NY, 14853, United States
Edwin Chihchuan Kan
Affiliation:
kan@ece.cornell.edu, Cornell University, Electrical and Computer Engr, 404 Phillips Hall Cornell University, Ithaca, NY, 14853, United States
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Abstract

Recently, metal nanocrystal based carbon nanotube memory has been demonstrated with sub-5V low bias programming, single electron sensitivity but poor room temperature retention. The process integration of an ultra-thin tunnel dielectric is essential for lateral, vertical scaling and reliable room temperature operation. Low defect density and conformal deposition on the nanotube are required to enhance the performance as a tunnel barrier. Additionally, Au contamination in the CNT decreases the on/off current ratio in the CNTFETs by substantially increasing the off current. Consequently, the dielectric should function as a good diffusion barrier for Au in the nanocrystals. We have explored composite tunneling dielectric film with SiO2 seed layer for conformal high-k deposition to demonstrate minimal Au contamination and improved retention. Room temperature retention of better than three days has been observed.

Keywords

memorynanoscaledielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O05-12
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Flaherty, N., IEE Review, 49 (11), 50, 2004.Google Scholar
2. White, M. H., Yang, Y., Purwar, A., and French, M. L., IEEE Trans. Components, Packaging, and Manufacturing Technology, Part A, 20, 190, 1997.Google Scholar
3. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Applied Physics Letters, 68, 1377, 1996.Google Scholar
4. Tiwari, S., Rana, F., Chen, W., Chan, K., and Hanafi, H., in Device Research Conference Digest, 19–21 June 1995, pp. 50–51, 1995.Google Scholar
5. Liu, Z., Narayanan, V., Kim, M., Pei, G., and Kan, E. C., in Device Research Conference. Conference Digest, 25–27 June 2001, pp. 79–80, 2001.Google Scholar
6. Lee, C., Ganguly, U., Narayanan, V., Hou, T. -H., and Kan, E. C., IEEE Elec. Dev. Lett., 26, 879, 2005.Google Scholar
7. Ganguly, U., Narayanan, V., Lee, C., Hou, T.-H., and Kan, E. C., Journal of Applied Physics, 99, 114516, 2006.Google Scholar
8. Saitoh, M., Nagata, E., and Hiramoto, T., Applied Physics Letters, 82, 1787, 2003.Google Scholar
9. Guo, L., Leobandung, E., and Chou, S. Y., Science 275 (5300), 649–51, 1997,Google Scholar
10. Choi, W. B., Chae, S. E., Bae, J. -W., Lee, B-H., Cheong, J. -R., Kim, J. -J., Kim, , Applied Physics Letters, 82, 275, 2003.Google Scholar
11. Ganguly, U., Kan, E. C., and Zhang, Y., Applied Physics Letters, 87 (4), 43108–1, 2005.Google Scholar
12. Ganguly, U., Hou, T.-H., Kan, E. C., IEEE Transaction on Nanotechnology (accepted).Google Scholar
13. Guo, J., Kan, E. C., Ganguly, U., Zhang, Y., Journal of Applied Physics, 99, 084301, 2006.Google Scholar
14. ALD of Al2O3 was performed at Cambridge Nanotech Inc., Boston MA. (http://www.cambridgenanotech.com/ )Google Scholar
15. Zhang, Y., and Dai, H., Applied Physics Letters, 77, 3015–17, 2000.Google Scholar
16. Durgun, E., Dag, S., Bagci, V. M. K., Gulseren, O., Yildirim, T., and Ciraci, S., Physical Review B 67, 201401R, 2003 Google Scholar
17. Mao, Y. -L., Yan, X. -H., and Xiao, Y., Nanotechnology, 16, 3092, 2005. doi:10.1088/0957-4484/16/12/061Google Scholar
18. Farmer, D. B., and Gordon, R. G., Electrochemical and Solid-State Letters, 8 (4), pp. G89–91, 2005.Google Scholar