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Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C

Published online by Cambridge University Press:  01 February 2011

Ming He
Affiliation:
mhe@dimes.tudelft.nl, Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands, +31-(0)15 2787031, +31-(0)15 26 22163
E.J.J. Neihof
Affiliation:
e.j.j.neihof@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES),, Laboratory of Electronic Components, Technology and Materials (ECTM),, Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
Y. Van Andel
Affiliation:
y.v.andel@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM),, Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
H. Schellevis
Affiliation:
Schellevis@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
R. Ishihara
Affiliation:
ishihara@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
J.W. Metselaar
Affiliation:
j.w.metselaar@ewi.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
C. I. M. Beenakker
Affiliation:
beenakker@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
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Abstract

Location-controlled grains with a diameter of 4 μm are successfully prepared by excimer laser crystallization of sputtered α-Si with μ-Czochralski (grain filter) process at a maximum processing temperature of 100°C. By a pulsed DC magnetron sputtering, α-Si film is deposited firstly on non-structured oxidized wafers for a test. It is found that a-Si film is easily ablated even with a low laser fluence when it is deposited with a substrate bias. From a non-biased sputtered α-Si precursor, grains with 1.8 mm in diameter can be prepared with excimer laser crystallization at room temperature. α-Si is then sputtered on the SiO2 with narrow holes (grain filters) and crystallized at room temperature. The location-controlled grains can be successfully prepared in a large energy density window. These location-controlled grains with a low temperature process are promising for single-grain thin film transistors (TFTs) on plastic substrate for an application to system integration on flexible microelectronics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C
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Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C
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Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C
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