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Preparation of Cu(In1-xGax)Se2 Thin Films and Solar Cells Using a Se-radical Beam Source

Published online by Cambridge University Press:  01 February 2011

Shogo Ishizuka
Affiliation:
shogo-ishizuka@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, 1-1-1 Umezono, Tsukuba, 3058568, Japan
Akimasa Yamada
Affiliation:
a.yamada@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan
Hajime Shibata
Affiliation:
h.shibata@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Nanoelectronics Research Institute, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan
Keiichiro Sakurai
Affiliation:
k-sakurai@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan
Paul Fons
Affiliation:
paul-fons@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, 1-1-1 Higashi, Tsukuba, Ibaraki, 3058562, Japan
Koji Matsubara
Affiliation:
koji.matsubara@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan
Shigeru Niki
Affiliation:
shigeru-niki@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan
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Abstract

We have grown device-grade Cu(In,Ga)Se2 (CIGS) thin films using a RF-cracked Se-radical beam source. A unique combination of film properties: smooth surface, large grain size and high photovoltaic performance are shown. A competitive energy conversion efficiency of 17 % has been demonstrated from a solar cell fabricated using a CIGS absorber grown with a Se-radical source. In addition to the unique combination of film properties and high photovoltaic performance, a significant improvement in the use of Se source material in comparison with the conventional Se-evaporative sources has been demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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