Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T18:28:54.723Z Has data issue: false hasContentIssue false
  • English
  • Français

Potential of Ag Interconnect and Contact Metallization for Various Applications via Cu Additions

Published online by Cambridge University Press:  01 February 2011

Hauk Han ,
Yeongseok Zoo ,
James W Mayer  and
Terry L Alford
Hauk Han
Affiliation:
Hauk.Han@asu.edu, Arizona State University, School of Materials, University drive and Mill, Tempe, AZ, 85287, United States, 480-965-5021
Yeongseok Zoo
Affiliation:
zooys@asu.edu, Arizona State University, School of Materials, Tempe, AZ, 85287-8706, United States
James W Mayer
Affiliation:
mayer@asu.edu, Arizona State University, School of Materials, Tempe, AZ, 85287-8706, United States
Terry L Alford
Affiliation:
ta@asu.edu, Arizona State University, School of Materials, Tempe, AZ, 85287-8706, United States
Get access

Abstract

The thermal stability of Ag(Cu) alloy thin films on indium tin oxide (ITO) has been investigated and compared to that of pure Ag thin films on ITO. Atomic force microscopy and X-ray diffraction results of annealed films show differences in the evolution of surface morphology and texture with annealing. The presence of Cu atoms in the silver impacts the surface energy and surface diffusion. This results in Ag and Ag(Cu) alloy having very different surface morphology and crystallographic texture. The enhanced texture and thermal stability of the Ag(Cu) alloy constitute its potential use contact as material for MOSFET and for flip-chip light-emitting diodes.

Keywords

Agmorphologymicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-24
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Murakra, S. P., Guttman, R. J., Kaloyeros, A. E., and Lanford, W. A., Thin Solid Films, 236, 257 (1993).Google Scholar
2 McBrayer, J. D., Swanson, R. M., and Sigmon, T. W., J. Electochem. Soc., 133, 1243 (1986).Google Scholar
3 Kim, H. C., Alford, T. L. and Allee, D. R., Appl. Phys. Lett., 81, 4287 (2002).Google Scholar
4 Kim, H. C., Theodore, N. D., and Alford, T. L., J. Appl. Phys. 95, 5180 (2004).Google Scholar
5 Rost, M. J., Quist, D. A., and Frenken, J.W.M., Phys. Rev. Lett. 91, 026101 (2003).Google Scholar
6 Knorr, D.B. and Rodbell, K.P., J. Appl. Phys. 79, 2409 (1996).Google Scholar
7 Knorr, D. B. and Tracy, D. P., Appl. Phys. Lett. 59, 3241 (1991).Google Scholar
8 Cho, J. and Thompson, C.V., Appl. Phys. Lett. 54, 2577 (1989).Google Scholar
9 Vaidya, S. and Sinha, A. K., Thin Solid Films 75, 253 (1981).Google Scholar