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Post Deposition Ultraviolet Treatment of Silicon Nitride Dielectric: Modeling and Experiment

Published online by Cambridge University Press:  01 February 2011

Vladimir Zubkov ,
Mihaela Balseanu ,
Li-Qun Xia  and
Hichem M'Saad
Vladimir Zubkov
Affiliation:
Vladimir_Zubkov@amat.com, Applied Materials Inc., Thin Films Group, 3050 Bower Ave., P.O.BOX 58309, Santa Clara, CA, 95054, United States
Mihaela Balseanu
Affiliation:
Mihaela_Balseanu@amat.com, Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Li-Qun Xia
Affiliation:
Li-Qun_Xia@amat.com, Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Hichem M'Saad
Affiliation:
Hichem_M'saad@amat.com, Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
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Abstract

Simulation and FTIR analysis of the UV treatment impact on bond strengths of PECVD deposited silicon nitride films

Keywords

dielectricsimulationinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A19-04
Copyright
Copyright © Materials Research Society 2006

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References

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