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Photoreflectance Investigation of Inas/Gaas Self-Assembled Quantum Dots Grown by Almbe

Published online by Cambridge University Press:  10 February 2011

M. Geddol ,
R. Ferrinm ,
G. Guizzetti ,
M. Patrini ,
S. Franchi  and
P. Frigeri
M. Geddol
Affiliation:
INFM - UdR Pavia, Via Bassi 6, I-27100 Pavia and Dipartimento di Fisica dell'Università di Parma, Viale delle Science 7a, I-43010 Fontanini (Parma), Italy
R. Ferrinm
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
M. Patrini
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
S. Franchi
Affiliation:
CNR-MASPEC Institute, Parco delle Scienze 37a, I-43010 Fontanini (Parma), Italy
P. Frigeri
Affiliation:
CNR-MASPEC Institute, Parco delle Scienze 37a, I-43010 Fontanini (Parma), Italy
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Abstract

Photoreflectance measurements have been performed in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The spectral features due to the QD optical response were analyzed by using lineshape models characteristic of modulation spectroscopy of confined systems. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and it is shown that Coulomb interaction can account for the observed different behavior of the ensemble optical response of QD families characterized by different morphologies and coexisting in the same sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 99
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. For a recent review, Bimberg, D., Grundmann, M., and Ledentsov, N.N., Quantum Dot Heterostructures (J. Wiley and Sons, London, 1999).Google Scholar
2.Aigouy, L., Holden, T., Pollak, F.H., Ledentsov, N.N., Ustinov, W.M., Kop'ev, P.S., and Bimberg, D., Appl. Phys. Lett. 70, 3329(1997).Google Scholar
3.Rowland, G.L., Hosea, T.J.C., Malik, S., Childs, D. and Murray, R., Appl. Phys. Lett. 73, 3268(1998).Google Scholar
4.Sun, B.Q., Lu, Z.D., Jiang, D.S., Wu, J.Q., Xu, Z.Y., Wang, Y.Q., Wang, J.N., and Ge, W.K., Appl. Phys. Lett. 73, 2657(1998).Google Scholar
5.Bosacchi, A., Frigeri, P., Franchi, S., Allegri, P., and Avanzini, V., J. Crystal Growth 175/176, 771 (1997); 201/202, 1136 (1999).Google Scholar
6.Geddo, M., Ferrin, R., Guizzetti, G., Patrini, M., Franchi, S., Frigeri, P., submitted to The European Physical Journal.Google Scholar
7.Geddo, M., Capizzi, M., A. Pataný, and Martelli, F., J. Appl. Phys. 84, 3374(1998).Google Scholar
8.Alessi, M. Grassi, Capizzi, M., Bhatti, A.S., Frova, A., Martelli, F., Frigeri, P., Bosacchi, A., and Franchi, S., Phys. Rev. B 59, 7620(1999).Google Scholar
9.Bhatti, A.S., Alessi, M. Grassi, Capizzi, M., Frigeri, P., and Franchi, S., Phys. Rev. B 60, 2592(1999).Google Scholar
10.Shen, H., Panad, S.H., and Pollack, F.H., Phys. Rev. B 37, 10919 (1988); J. Glembocki and B. Shanabrook, Semiconductors and Semimetals, edited by D.G., Seiler and C.L., Littler (Academic, Boston, 1992), Vol.36, p. 221; F. H. Pollak, in Handbook on Semiconductors, edited by P. Balkansky (North-Holland, Amsterdam, 1994), Vol. 2, p. 527.Google Scholar
11.Geddo, M., Lernia, S. Di, Stella, A., Bosacchi, A., Franchi, S., Gentili, M. and Peschiaroli, D., Sol. State Commun. 100, 221(1996).Google Scholar
12.Kim, J., Lin-Wang Wang, and Zunger, A., Phys. Rev. B 57, R9408 (1998).Google Scholar
13.Heitz, R., Kalburge, A., Xie, Q., Grundmann, M., Chen, P., Hoffmann, A., Madhukar, A., and Bimberg, D., Phys. Rev. B 57, 9050(1998).Google Scholar
14.Solomon, G.S., Trezza, J.A., Marshall, A.F., and Harris, J.S. Jr, Phys. Rev. Lett. 76, 952(1996).Google Scholar
15.Bastard, G., Wave mechanics applied to semicondustor heterostructures, (Paris, Les Editions de Physique, 1992).Google Scholar
16.Colocci, M., Vinattieri, A., Lippi, L., Bogani, F., M. Rosa-Clot, Taddei, S., Bosacchi, A., Franchi, S., and Frigeri, P., Appl. Phys. Lett. 74, 564(1999).Google Scholar
17.Taddei, S., Colocci, M., Vinattieri, A., Bogani, F., Franchi, S., and Frigeri, P., (private communication).Google Scholar