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Photoreflectance Investigation of Inas/Gaas Self-Assembled Quantum Dots Grown by Almbe

Published online by Cambridge University Press:  10 February 2011

M. Geddol
Affiliation:
INFM - UdR Pavia, Via Bassi 6, I-27100 Pavia and Dipartimento di Fisica dell'Università di Parma, Viale delle Science 7a, I-43010 Fontanini (Parma), Italy
R. Ferrinm
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
M. Patrini
Affiliation:
INFM - Dipartimento di Fisica «A. Volta» Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
S. Franchi
Affiliation:
CNR-MASPEC Institute, Parco delle Scienze 37a, I-43010 Fontanini (Parma), Italy
P. Frigeri
Affiliation:
CNR-MASPEC Institute, Parco delle Scienze 37a, I-43010 Fontanini (Parma), Italy
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Abstract

Photoreflectance measurements have been performed in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The spectral features due to the QD optical response were analyzed by using lineshape models characteristic of modulation spectroscopy of confined systems. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and it is shown that Coulomb interaction can account for the observed different behavior of the ensemble optical response of QD families characterized by different morphologies and coexisting in the same sample.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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Photoreflectance Investigation of Inas/Gaas Self-Assembled Quantum Dots Grown by Almbe
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