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Photoluminescence Studies of Si Quantum Dot Thin Film Materials

Published online by Cambridge University Press:  21 February 2011

LA. Chiu ,
A.A. Seraphin  and
K.D. Kolenbrander
LA. Chiu
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
A.A. Seraphin
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
K.D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

A laser ablation supersonic expansion source is used to deposit self-supporting thin films of agglomerated Si nanocrystallites. Average particle size is controlled through variation of deposition process parameters, including relative ablation pulse/gas valve timing and interaction channel length, as well as post-deposition processing steps, including repeated HF etch/oxide regrowth cycles, and oxidation furnace treatments. Films are characterized using photoluminescence (PL) emission spectroscopy. Clear spectral trends in the PL emission data point to a correlation between process parameter control, mean particle size, and peak PL wavelength. We conclude that quantum size effects play a critical role in defining the PL emission wavelength of Si nanocrystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 281
Copyright
Copyright © Materials Research Society 1994

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