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Photoluminescence measurement of sidewall damage in etched InGaAsP/lnP and GaAs/AIGaAs microstructures

Published online by Cambridge University Press:  26 February 2011

P. Grabbe ,
A. Scherer ,
K. Kash ,
R. Bhat ,
J. Harbison ,
L. Florez  and
M. Koza
P. Grabbe
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
A. Scherer
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
K. Kash
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
R. Bhat
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
J. Harbison
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
L. Florez
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
M. Koza
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7040
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Abstract

We report the first investigation of the effect of dry etching parameters on the sidewall carrier recombination rate of GaAs/AIGaAs and lnPilnGaAsP microstructures. Surface recombination was measured as a function of ion voltage and etching time. The increase in recombination rate due to etching can be reversed by subsequent chemical removal of the immediate sidewall layer. By monitoring the recovery in recombination rate as a function of the amount of sidewall layer removed, the effective damage depth is inferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 145
Copyright
Copyright © Materials Research Society 1989

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References

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