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Photoluminescence Characterization of p-type GaN:Mg

Published online by Cambridge University Press:  10 February 2011

Dorina Corlatan ,
Joachim Krüger ,
Christian Kisielowski ,
Ralf Klockenbrink ,
Yihwan Kim ,
G. S. Sudhir ,
Yann Peyrot ,
Michael Rubin  and
Eicke R. Weber
Dorina Corlatan
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Joachim Krüger
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Christian Kisielowski
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Ralf Klockenbrink
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Yihwan Kim
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
G. S. Sudhir
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Yann Peyrot
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Michael Rubin
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science, UC Berkeley, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
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Abstract

We report on results of low-temperature photoluminescence measurements performed on GaN films, grown by molecular beam epitaxy (MBE) on sapphire substrates. The GaN films are either Mg doped (p-type) or consist of a Mg-doped layer on top of a Si doped GaN layer (n-type). In the p-doped samples, the sharpness of the donor-acceptor-pair transition is striking, three phonon replicas are clearly resolved. A transition band occurs around 3.4 eV, which becomes dominant for samples with an np-layer structure. The position and the composition of the near band edge transitions are influenced by the growth of the buffer layers. Depending on the growth conditions a transition at 3.51 eV can be observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 673
Copyright
Copyright © Materials Research Society 1998

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