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Photoluminescence and Raman Spectra of Flux Processed Bulk Single Crystal GaN

Published online by Cambridge University Press:  21 March 2011

Chae Ryong Cho
Affiliation:
COMTECS Ltd, Advanced Materials Research Laboratory, Taegu, 704-702, KOREA
Sang Eon Park
Affiliation:
COMTECS Ltd, Advanced Materials Research Laboratory, Taegu, 704-702, KOREA Department of Physics, Pusan National University, Pusan, 609-735, KOREA
Yong Chan Cho
Affiliation:
COMTECS Ltd, Advanced Materials Research Laboratory, Taegu, 704-702, KOREA Department of Physics, Pusan National University, Pusan, 609-735, KOREA
Se-Young Jeong
Affiliation:
Department of Physics, Pusan National University, Pusan, 609-735, KOREA
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Abstract

Bulk wurtzite-GaN crystal was obtained with a size more than 3 mm along the length of the crystal and with a thickness 200 ∼ 300 µm at around 750°C and 100 bar for 24 hrs in the flux growth method. The structural and compositional property of the GaN bulk single crystal was also studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques. Photoluminescence, cathodoluminescence and micro-Raman measurements at room temperature are investigated for bulk single crystals of wurtzite GaN. The cathodoluminescence peak of near band-to-band transition at 365.5 nm and the E2(high energy, 568 cm−1) and A1(LO, 737 cm−1) Raman phonon modes were obtained according to the different position of the (0001) surface of GaN grown by flux method. Sharp line shape for the strain-sensitive E2 (high) mode is considered to be due to the high crystalline quality of the crystal.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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