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Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials
Published online by Cambridge University Press: 01 February 2011
We report the energy band alignment of Ge2Sb2Te5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel silicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge2Sb2Te5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge2Sb2Te5 and these CMOS compatible materials were established.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G02-08
- Copyright © Materials Research Society 2008