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Phonons in Mixed II-VI Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

D. N. Talwar
Affiliation:
Department Of Physics, Indiana University Of Pennsylvania, Indiana, Pa, 15705
Alan C. Coleman
Affiliation:
Department Of Physics, Indiana University Of Pennsylvania, Indiana, Pa, 15705
P. M. Amirtharaj
Affiliation:
U.S. Army Center for Night Vision and Electro-Optics, Fort Belvoir, VA, 22060
S. Perkowitz
Affiliation:
Department of Physics, Emory University, Atlanta, GA, 30322
Z. C. Feng
Affiliation:
Department of Physics, Emory University, Atlanta, GA, 30322
P. Becla
Affiliation:
MIT Francis Bitter Magnetic Laboratory, Cambridge, MA, 02139
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Abstract

We have analysed the far infrared reflectivity and Raman scattering spectra of phonons in Cd1−xMnxTe, Zn1−xMnxTe, Hg1−xMnxTe, and Hg1−xZnxTe for low composition of x. Unlike CdMnTe and ZnMnTe, weak impurity induced peaks are observed in HgZnTe and HgMnTe, near ˜ 96 and 98 cm−1, well above the LA-phonon band of HgTe. Comprehensive calculation of lattice dynamics based on a semi-empirical Green's function theory has provided convincing arguments to support the above features as gap modes of Zn and Mn in HgTe. The theory also predicts the possibility of resonance modes, above the TA cutoff of HgTe, in HgMnTe and HgZnTe to be observed by IR spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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Phonons in Mixed II-VI Compound Semiconductors
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