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Published online by Cambridge University Press: 03 September 2012
Transmittance, reflectance and Raman measurements have been performed from 50 to 700 cm−1 on different thin films of β-FeSi2 epitaxially grown by MBE on Si substrates. Vibrational spectra show much more structures than the five phonons usually observed in this material; the dependence on the crystalline orientation, the thickness, the growth and the annealing temperature has been studied.