Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-18T19:30:23.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Percolation Behaviour in the Electrical Characteristics of Hydrogenated Amorphous Silicon Nitride Films.

Published online by Cambridge University Press:  21 February 2011

J.M. López-Villegas ,
B. Garrido ,
M.S. Benrakkad ,
J. Samitier ,
E. Bertran ,
A. Canillas  and
J.R. Morante
J.M. López-Villegas
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
B. Garrido
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
M.S. Benrakkad
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
J. Samitier
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
E. Bertran
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
A. Canillas
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
J.R. Morante
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona (SPAIN).
Get access

Abstract

The electro-optical properties of hydrogenated amorphous silicon nitride films (a-SiNx:H) prepared by rf glow discharge of SiH4 and N2 have been determined as a function of the silicon content in the alloy. The stoichiometry and structure of the layers have been studied by ellipsometry, infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Two different electrical behaviours have been found. The samples with x>0.8 show conductivity based on the Frenkel-Poole mechanism, while the samples with x<0.8 show quasi-ohmic conductivity. Both kinds of conduction and the transition between them are analyzed in the framework of the percolation theory. In this context, the correlation between the stoichiometry and structure of the layers with their electrical behaviour indicate that the transition from the Frenkel-Poole to the quasi-ohmic conduction is a consequence of the formation of conducting paths as the percolation threshold of Si-Si bonds is reached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 655
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Heiman, F.P. and Warfield, G., IEEE Trans. Electron. Devices, ED-12, 167 (1965).Google Scholar
2. Lakhdari, H., Vuillaume, D. and Bourgoin, J.C., Phys. Rev. B, 38, 13124 (1988).Google Scholar
3. López-Villegas, J.M., Morante, J.R., Samitier, J., Cornet, A., Renaud, M. and Boher, P.., Appl. Phys. Lett., 58, 919 (1991).Google Scholar
4. Osenbach, J.W. and Knolle, W.R., J. Appl. Phys., 60, 1408 (1986).Google Scholar
5. Lau, W.S., Fonash, S.J. and Kanichi, J.., J. Appl. Phys., 66, 2765 (1989).Google Scholar
6. Osenbach, J.W., Knolle, W.R. and Elia, A., J. Electrochem. SOC, 136, 3409 (1989).Google Scholar
7. Robertson, J., Phil. Mag., 63, 47 (1991).Google Scholar
8. Martinez, E. and Yndurain, F., Phys. Rev. B, 24, 5718 (1981).CrossRefGoogle Scholar
9. Pike, G.E. and Seager, C.H., Phys. Rev. B, 10, 1421 (1974).Google Scholar
10. Seager, C.H. and Pike, G.E., Phys. Rev. B, 10, 1435 (1974).CrossRefGoogle Scholar
11. Shklovskii, B.I. and Efros, A.L., in Electronic Properties of Doped Semiconductors. Springer Series in Solid-state Science, vol 45, edited by Cardona, M. (Springer-Verlag Berlin Heidelberg, 1984), pp. 94–136.Google Scholar
12. Bertran, E., López-Villegas, J.M., Andújar, J.L., Campmany, J., Canillas, A. and Morante, J.R., J. Non Crys. Solids, 137–138, 895 (1991).CrossRefGoogle Scholar
13. Kato, I., Noguchi, K. and Numada, K., J. Appl. Phys., 62, 492 (1987).CrossRefGoogle Scholar
14. Lanford, W.A. and Rand, M.J., J. Appl. Phys., 49, 2473 (1978).Google Scholar
15. Ingo, G.M. and Zacchetti, N., J. Vac. Sci. Technol. A, 7, 3048 (1989).Google Scholar