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Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development

Published online by Cambridge University Press:  26 February 2011

C. Edirisinghe ,
H. E. Ruda ,
I. Koutzarov ,
Q. Liu ,
L. Jedral ,
M. G. Boudreau ,
M. Boumerzoug ,
J. Brown ,
P. Mascher  and
A. Moore
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C. Edirisinghe
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, Department of Electrical and Computing Engineering, University of Toronto, Toronto, Canada, M5S 1A4
H. E. Ruda
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, Department of Electrical and Computing Engineering, University of Toronto, Toronto, Canada, M5S 1A4
I. Koutzarov
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science,
Q. Liu
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science,
L. Jedral
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science,
M. G. Boudreau
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada, L8S 4L7
M. Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada, L8S 4L7
J. Brown
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada, L8S 4L7
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada, L8S 4L7
A. Moore
Affiliation:
EG&G Canada, Optoelectronics Division, 22001 Dumberry, Vaudreuil, Canada, J7V 8P7
R. Henderson
Affiliation:
EG&G Canada, Optoelectronics Division, 22001 Dumberry, Vaudreuil, Canada, J7V 8P7
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Abstract

We report on the optical characterization of sulphur (S) passivated AlxGa1−xAs/GaAs surfaces using photoluminescence (PL) and surface photovoltage (SPV) measurements. Both techniques show an enhancement in the near bandgap signal intensity, implying a reduction of the non-radiative recombination rate at the surface. To counter the instability of S-passivation, due to re-oxidation, dielectric layers of silicon nitride were deposited using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD); the deposition of dielectric layers up to lOOnm thick does not appear to cause significant deterioration or stress at the insulator/AlGaAs interface. The dielectric layers are shown to be resistant to oxidation, and effective in maintaining the passivation effect over a period of weeks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1007
Copyright
Copyright © Materials Research Society 1995

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