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Oxygen Precipitation in Silicon

Published online by Cambridge University Press:  28 February 2011

S. M. Hu
S. M. Hu*
Affiliation:
IBM General Technology Division East Fishkill Facility, Hopewell Junction, NY 12533
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Abstract

The precipitation of oxygen in silicon exhibits many interesting phenomena: the precipitates are often distributed in striated zones; the morphology of precipitates changes with annealing temperatures; the kinetics of precipitation in the bulk is affected by annealing ambients and other surface treatments. These phenomena are briefly reviewed. A model consistent with all these phenomena is presented. Then, the energetics and the kinetics of nucleation and precipitation are discussed. Finally, a growth law is derived in general for disc precipitates, and applied in particular to oxygen precipitates in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 249
Copyright
Copyright © Materials Research Society 1986

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References

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