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Oxide and Nitride Formation and Segregation of Metals During Oxygen and Nitrogen Bombardment of Silicon

Published online by Cambridge University Press:  10 February 2011

J. S. Williams ,
M. Petravic ,
M. Conway ,
L. Fu  and
D. J. Chivers
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT, 0200, Australia
M. Petravic
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT, 0200, Australia
M. Conway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT, 0200, Australia
L. Fu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT, 0200, Australia
D. J. Chivers
Affiliation:
AEA Technology, Harwell, Didcot, Berks., U.K.
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Abstract

This study compares oxide and nitride formation during oxygen and nitrogen bombardment of Si. Ion bombardment is carried out both in a SIMS machine and in a conventional implanter at various temperatures. Stoichiometric SiO2 and slightly N-rich Si3N4 are formed during bombardment even at cryogenic temperatures. Implanted metals were found to have a strong tendency to be segregated at a moving Si-SiO2 interface during oxygen bombardment but little segregation is observed at a Si-Si3N4 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 153
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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