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Oxidation Of AIN-Al2O3 Composite Film Prepared By Microwave Plasma CVD

Published online by Cambridge University Press:  16 February 2011

Yoshihiro someno
Alps Electric Co. Ltd, Ohta-ku, Tokyo 145, Japan
Makoto sasaki
Institute for Materials Research, Tohoku University Aoba-ku, Sendai 980, Japan
Toshio Hirai
Alps Electric Co. Ltd, Ohta-ku, Tokyo 145, Japan
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Thermal oxidation resistance, in a temperature range of 600 to 1100° C, of AIN-Al2O3 composite, AIN and θ-A12 O3 films has been studied. The films were prepared by microwave plasma CVD using an AlBr3 -H2 -N2 -Ar gas system at a substrate temperature of 430° C. AIN-Al2O3 composite film was found to have good surface stability below an oxidaton temperature of 1100°C and to have the best properties for insulation film.

Key words: microwave plasma CVD, AIN-Al2O3 composite, passivation film, oxidation resistance, AlBr3

Research Article
Copyright © Materials Research Society 1991

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