Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-rpvk9 Total loading time: 0.191 Render date: 2021-09-25T11:55:50.234Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method

Published online by Cambridge University Press:  10 February 2011

Hiroya Kitahata
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Kiyoharu Tadanaga
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Tsutomu Minami
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Norifumi Fujimura
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Taichiro Ito
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Get access

Abstract

The preparation conditions of YMnO3 thin films by the sol-gel method using yttrium alkoxide were optimized to decrease the leakage current of the films. The leakage current of the films was decreased due to the dense microstructure of the films. Moreover, the heat treatment in hydrogen atmosphere and the zirconium doping resulted in a further decrease of the leakage current. The heat treatment in hydrogen atmosphere and the zirconium doping were effective in the decrease of carriers originating in the valence fluctuation of the Mn ions in YMnO3

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fujimura, N., Ishida, T., Yoshimura, T., and Ito, T., Appl. Phys. Lett., 69, 1011 (1996).CrossRefGoogle Scholar
[2] Yoshimura, T., Fujimura, N., Ito, D., and Ito, T., J. Appi. Phys. to be appeared in April (2000) issue.Google Scholar
[3] Yi, W., Choe, J., Moon, C., Kwun, S., and Yoon, J., Appl. Phys. Lett., 73, 903905 (1998).CrossRefGoogle Scholar
[4] Teowee, G., McCarthy, K. C., McCarty, F. S., Bukowski, T. J., Davis, D. G. Jr, and Uhlmann, D. R., J. Sol-Gel. Sci. Tech., 13, 889 (1998).Google Scholar
[5] Kamata, K., Nakajima, T., and Nakamura, T., Mat. Res. Bull., 14, 1007 (1979).CrossRefGoogle Scholar
[6] Rao, G. V. Subba, Wanklyn, B. M., and Rao, C. N. R., J. Phys. Chem. Solids, 32, 345 (1971).Google Scholar
[7] Moure, C., Fernandez, J. F., Villegas, M., and Duran, P., J. Euro. Ceram. Soc., 19, 131 (1999).CrossRefGoogle Scholar
[8] Shimura, T., Fujimura, N., Yamamori, S., Yoshimura, T., and Ito, T., Jpn. J. Appl. Phys., 37, 5280 (1998).CrossRefGoogle Scholar
[9] Fujimura, N., Tanaka, H., Kitahata, H., Tadanaga, K., Yoshimura, T., Ito, T., and Minami, T., Jpn. J. Appl. Phys., 36, L1601 (1997).CrossRefGoogle Scholar
[10] Kitahata, H., Tadanaga, K., Minami, T., Fujimura, N., and Ito, T., J. Am. Ceram. Soc., 81, 1357 (1998).CrossRefGoogle Scholar
[11] Tadanaga, K., Kitahata, H., Minami, T., Fujimura, N., and Ito, T., J. Sol-Gel Sci. Tech., 13, 903 (1998).CrossRefGoogle Scholar
[12] Kitahata, H., Tadanaga, K., Minami, T., Fujimura, N., and Ito, T., Appl. Phys. Lett., 75, 719 (1999).CrossRefGoogle Scholar
[13] Kitahata, H., Tadanaga, K., Minami, T., Fujimura, N., and Ito, T., accepted for publication in J. Sol-Gel Sci. Tech.Google Scholar
[14] Kitahata, H., Tadanaga, K., Minami, T., Fujimura, N., and Ito, T., Jpn. J. Appl. Phys., 38, 5448 (1999).CrossRefGoogle Scholar
[15] Bhattacharya, P., Park, K. H., and Nishioka, Y., Jpn. J. Appl. Phys., 33, 5231 (1994).CrossRefGoogle Scholar
[16] Cho, H. J., Jo, W., and Noh, T. W., Appl. Phys. Lett., 65, 1525 (1994).CrossRefGoogle Scholar
[17] In, T. G., Baik, S., and Kim, S., J. Mater. Res., 13, 990 (1998).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *