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Optimization of Ultrathin ALD Tantalum Nitride Films for Zero-Thickness Liner Applications

Published online by Cambridge University Press:  01 February 2011

Oscar van der Straten ,
Yu Zhu ,
Eric Eisenbraun  and
Alain Kaloyeros
Oscar van der Straten
Affiliation:
University at Albany Institute for Materials and School of Nanosciences and Nanoengineering, Albany, NY 12203
Yu Zhu
Affiliation:
University at Albany Institute for Materials and School of Nanosciences and Nanoengineering, Albany, NY 12203
Eric Eisenbraun
Affiliation:
University at Albany Institute for Materials and School of Nanosciences and Nanoengineering, Albany, NY 12203
Alain Kaloyeros
Affiliation:
University at Albany Institute for Materials and School of Nanosciences and Nanoengineering, Albany, NY 12203
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Abstract

A metal-organic atomic layer deposition (ALD) tantalum nitride process has been demonstrated for zero-thickness liner applications in advanced copper metallization schemes. Utilizing a commercially available ALD reactor, this process employs a liquid tantalum source (tertbutylimido tris(diethylamido) tantalum—TBTDET) and ammonia as the reactants. Key functionality data addressing the self-limiting nature of ALD film growth with respect to key process parameters including processing temperature and the substrate surface exposures to TBTDET and ammonia have been obtained, leading to the establishment of an optimized ALD processing window. Highly conformal, continuous, and smooth growth over high aspect ratio structures is exhibited, and incubation periods appear to be relatively substrate independent. Preliminary thermal and electrical copper barrier performance testing of the deposited films indicates that they hold promise for use in emerging nanoscale interconnect applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B11.3
Copyright
Copyright © Materials Research Society 2002

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