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Optimization of Dielectric Cap Adhesion to Ultra-Low-k Dielectrics

Published online by Cambridge University Press:  17 March 2011

Greg Spencer
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Alfred Soyemi
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Kurt Junker
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Jason Vires
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Michael Turner
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Stuart Kirksey
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
David Sieloff
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
Narayanan Ramani
Affiliation:
Semiconductor Products Sector, Motorola, Inc. 3501 Ed Bluestein Blvd Austin, Texas 78721
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Abstract

In this work, the adhesion of CVD dielectric caps to ULK MSQ spin-on dielectric materials with k values of 2.2 and 2.0, and a ULK CVD material with a k value of 2.7 is presented. A substantial improvement in cap adhesion to both the k2.2 ULK MSQ and the k2.7 ULK CVD material is demonstrated. The improvement is obtained using a low-k CVD glue material between the ULK dielectric and the subsequent cap material and/or by optimizing the CVD cap film deposition. Four-point bend measurement of adhesion strength is used to quantify the improvement in interface adhesion. The improvement in CVD cap adhesion is demonstrated to be strongly dependent upon both the glue layer film and the cap deposition conditions. While optimization of the CVD cap materials results in adequate adhesion for the k2.2 ULK MSQ, these improvements are demonstrated not to extend to the k2.0 ULK MSQ film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1.International Technology Roadmap For Semiconductors, Interconnect, 5-6 (2003).Google Scholar
2. Yu, K.C. et al. ; International Interconnect Technology Conference Proceedings, 911 (2002).Google Scholar
3. Ma, Q.; Journal of Materials Research, 12, 840845 (1997).CrossRefGoogle Scholar
4. Dauskardt, R.H. et al. ; Engineering Fracture Mechanics, 61, 141162 (1998).CrossRefGoogle Scholar
5. Sherban, T et al. ; International Interconnect Technology Conference Proceedings, 257259 (2001).Google Scholar

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