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Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films

Published online by Cambridge University Press:  25 February 2011

W. L. Warren ,
J. Kanicki ,
F. C. Rong ,
W. R. Buchwald  and
M. Harmatz
W. L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. Kanicki
Affiliation:
lBM T. J. Watson Research Center, Yorktown Height NY 10598
F. C. Rong
Affiliation:
Electronics Technology and Devices Lab, Ft. Monmouth, NJ 07703
W. R. Buchwald
Affiliation:
Electronics Technology and Devices Lab, Ft. Monmouth, NJ 07703
M. Harmatz
Affiliation:
Electronics Technology and Devices Lab, Ft. Monmouth, NJ 07703
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Abstract

The creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins is electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 687
Copyright
Copyright © Materials Research Society 1992

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References

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