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Optically Detected Magnetic Resonance of Arsenic Antisites in GaAs MBE Layers Grown at Low Temperatures
Published online by Cambridge University Press: 15 February 2011
Observation of Arsenic antisites (AsGa) in GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (∼ 200°C) is reported, using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA tagged by optically detected magnetic resonance (MCDA-ODMR). This experiment confirms that there is a MCD absorption band directly associated with AsGa in the GaAs layers. The AsGa concentration in the GaAs layers is found to decrease by about one order of magnitude after annealing at 600°C for two minutes.
- Research Article
- Copyright © Materials Research Society 1992
Current address: GEO-Centers, Inc., c/o U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703; work performed at U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey.