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Optical properties of cubic AlGaN

Published online by Cambridge University Press:  21 March 2011

Stéphane Fanget
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon –Bât Blaise Pascal, 69621 Villeurbanne Cedex France.
Catherine Bru-Chevallier
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon –Bât Blaise Pascal, 69621 Villeurbanne Cedex France.
Gérard Guillot
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon –Bât Blaise Pascal, 69621 Villeurbanne Cedex France.
Esteban Martinez-Guerrero
Affiliation:
CEA DRFMC and UJF-LSP-38054 Grenoble Cedex 9 – France.
Denis Jalabert
Affiliation:
CEA DRFMC and UJF-LSP-38054 Grenoble Cedex 9 – France.
Bruno Daudin
Affiliation:
CEA DRFMC and UJF-LSP-38054 Grenoble Cedex 9 – France.
Henri Mariette
Affiliation:
CEA DRFMC and UJF-LSP-38054 Grenoble Cedex 9 – France.
Le Si Dang
Affiliation:
CEA DRFMC and UJF-LSP-38054 Grenoble Cedex 9 – France.
Gabriel Ferro
Affiliation:
LMI (UMR CNRS 5615) UCB-Lyon1 B'at 731–69622 Villeurbanne Cedex France.
Yves Monteil
Affiliation:
LMI (UMR CNRS 5615) UCB-Lyon1 B'at 731–69622 Villeurbanne Cedex France.
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Abstract

In this work we report optical characterization on several cubic c-AlGaN layers grown by MBE on SiC on Si pseudo-substrates, with different aluminum concentrations ranging from 0 to 70 %. Excitation power evolution of AlGaN photoluminescence (PL) spectra as well as reflectivity spectra allow to attribute PL peak to band gap recombination. PL energy dependence versus aluminum concentration is given. Reflectivity investigations are performed in the energy range between 1.5 eV and 4 eV on the samples. Theoretical calculations of multilayered structure reflectivity are fitted to experimental results, allowing an accurate determination of refractive index evolution versus Al concentration. From this analysis, qualitative information about interface roughness at AlGaN/SiC is also be derived.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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