Hostname: page-component-5d59c44645-dknvm Total loading time: 0 Render date: 2024-03-03T22:34:34.757Z Has data issue: false hasContentIssue false

Optical Properties of AlGaN Quantum Well Structures

Published online by Cambridge University Press:  03 September 2012

Hideki Hirayama
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan, hirayama@postman.riken.go.jp
Yasushi Enomoto
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan, hirayama@postman.riken.go.jp Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Atsuhiro Kinoshita
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan, hirayama@postman.riken.go.jp Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Akira Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Yoshinobu Aoyagi
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan, hirayama@postman.riken.go.jp
Get access

Abstract

We demonstrate 230-250 nm efficient ultraviolet (UV) photoluminescence (PL) from AlN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metalorganic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL properties of high Al content AlGaN bulk (Al content: 85-95%) emitting from near band-edge. We systematically investigated the PL properties of AlGaN-MQWs consisting of wide bandgap AlGaN (Al content: 53-100%) barrier. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82N MQWs, respectively, at 77 K. The optimum value of well thickness was approximately 1.5 nm. The emission from the AlGaN MQWs were several tens of times stronger than that of bulk AlGaN. We found that the most efficient PL is obtained at around 240 nm from AlGaN MQWs with Al0.8Ga0.2N barriers. Also, we found that the PL from AlGaN MQW is as efficient as that of InGaN QWs at 77 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kozodoy, Peter, Hansen, Monica, DenBaars, S. P. and Mishra, U. K., Appl. Phys. Lett. 74, 3681, (1999).Google Scholar
2. Mukai, T., Narimatsu, H. and Nakamura, S., J. Crystal Growth 189/190, 778, (1998).Google Scholar
3. Kinoshita, A., Hirayama, H., Ainoya, M., Hirata, A. and Aoyagi, Y., to be submitted.Google Scholar
4. Hirayama, H. and Aoyagi, Y., Mater. Res. Soc. Proc. 537, G3.74 (1999).Google Scholar
5. Kinoshita, A., Hirayama, H., Hirata, A. and Aoyagi, Y., International Conference on Solid State Device and Materials (SSDM), C–4–2, Tokyo (1999).Google Scholar
6. Chichibu, S., Cohen, D. A., Mack, M. P., Abare, A. C., Kozodoy, P., Minsky, M., Fleischer, S., Keller, S., Bowers, J. E., Mishra, U. K., Coldren, L. A., Clarke, D. R. and DenBaars, S. P., Appl. Phys. Lett. 73, 496, (1998).Google Scholar