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The Optical Properties and Stability of GE and Sn-Doped TEOx Films

Published online by Cambridge University Press:  28 February 2011

W -Y Lee ,
C. R. Davis ,
G. Lim ,
H. Coufal  and
F. Sequeda
W -Y Lee
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
C. R. Davis
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
G. Lim
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
H. Coufal
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
F. Sequeda
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
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Abstract

The optical properties and the thermal stability of Ge and Sn doped TeOx films prepared by coevaporating TeO2, Te, Ge and Sn are reported. These films are amorphous as-deposited and crystalline Te appears after annealing at, e.g., 100 to 250°C. As expected, the addition of Ge and Sn increases the absorption of the TeOx films at the wavelength of interest (e.g., 830 nm). However, the thermal stability of (TeO1.1)1-xGex (x=0 to ~0.7) films is found to decrease with increasing x initially, starting to increase with increasing x only after x reaches a value between 0.3 and 0.4. These results differ from those reported previously for Ge and Sn-doped TeOx films and from those observed for Te-Ge alloy films. Interpretations of these results based on a solid state reaction between TeO2 and Ge or Sn during deposition are presented and discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 705
Copyright
Copyright © Materials Research Society 1986

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References

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