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Optical Characterization of Buried Ingaas/GaAs Wires Overgrown by MBE

Published online by Cambridge University Press:  21 February 2011

K. Pieger ,
J. Straka ,
Ch. Gréus  and
A. Forchel
K. Pieger
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
J. Straka
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
Ch. Gréus
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
A. Forchel
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
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Abstract

We have prepared buried InGaAs/GaAs wires by high resolution electron beam lithography, wet chemical etching and subsequent MBE overgrowth. Wires with lateral widths of less than 40nm have been realized.

For optimized regrowth conditions such as growth temperature, growth rate, III/V ratio, and arsenic flux a smooth surface morphology of the 100nm thick overgrown (Al)GaAs layer is obtained.

Etched only ultra narrow wires show a decrease of radiative recombination due to process induced defects and surface recombination at the open sidewalls. Optical investigations of narrow overgrown wires show a significant enhancement (up to two orders of magnitude) of the photoluminescence intensity. This is due to the disappearance of the open sidewalls and carrier capture from the overgrown barrier.

From studies of the influence of the crystallographic orientation on the quantum efficiency we find, that <111>B surfaces of the <011> wires offer the best conditions for MBE overgrowth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 519
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Naganume, Y., Arakawa, Y., Tsukamoto, S., Nishioka, M., Sasaki, S., Miura, N., Phys. Rev. Lett. 69, 2963(1992)Google Scholar
2 Marti, U., Proctor, M., Martin, D., Mourier-Genould, F., Senior, B., Reinhard, F. K., Microelectronic Eng. 13, 391 (1991)Google Scholar
3 Hämisch, Y., Steffen, R., Oshinowo, J., Forchel, A., Röntgen, P., Vac, J.. Sci. Technol. B 10, 2864 (1992)Google Scholar
4 Itoh, M., Honda, T., Tsubaki, K., Jap. Jour. Appl. Phys. 30, pp. 2455 (1991)Google Scholar
5 Bickl, Th., Jacobs, B., Forchel, A., Röntgen, P., Gyuro, I., Speier, P., Zielinski, E., Inst. Phys. Conf. Ser. 129, pp. 933 (1992)Google Scholar
6 Schmidt, A., Forchel, A., Straka, J., Gyuro, I., Speier, P., Zielinski, E., Vac, J.. Sci. Technol. B 10, pp. 2896 (1992)Google Scholar
7 Notomi, M., Naganuma, M., Nishida, T., Tamamura, T., Iwamura, H., Nojima, S.,. Okamoto, M., Appl. Phys. Lett. 58, pp. 720 (1991)CrossRefGoogle Scholar
8 Clausen, E. M. Jr., Craighead, H.G., Worlock, J:M., Harbison, J.P., Schiavone, L.M., Florez, L., Van der Gaag, B., Appl. Phys. Lett. 55, 1427 (1989)Google Scholar
9 Adachi, S., Oe, K., J. Electrochem. Soc., 130, 2427 (1983)Google Scholar
10 Dreybrodt, J., Forchel, A., Reithmaier, J.P., Phys Rev B, (1993) in printGoogle Scholar
11 Gréus, Ch., Forchel, A., Straka, J., Pieger, K., Emmerling, M., Appl. Phys. Lett 61, 1199 (1992)Google Scholar