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Optical Bleaching of Bismuth Implanted Silica Glass: A Threshold Effect

Published online by Cambridge University Press:  25 February 2011

S. Y. Park ,
R. H. Magruder III ,
R. A. Weeks  and
R. A. Zuhr
R. H. Magruder III
Affiliation:
Materials Science and Engineering, Vanderbilt University, Nashville, TN
R. A. Weeks
Affiliation:
Materials Science and Engineering, Vanderbilt University, Nashville, TN
R. A. Zuhr
Affiliation:
Solid State Division, ORNL, Oak Ridge, TN
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Abstract

The near surface regions of high purity silica glass discs, Spectrosil A, were modified by implantation with bismuth ions at 160 keV and room temperature. The glasses implanted with a nominal dose of 6×1016 Bi/cm2 at ∼5 μA/cm2 were subsequently bleached with a 5.0 eV KrF pulsed excimer laser. The laser had an average pulse duration of -20 ns and repetition rate of 10 Hz. It was found that the bleaching was dependent upon the power density of the laser for a constant total integrated energy. Ion backscattering and optical absorption measurements were made before and after laser irradiation. Large changes in optical density and depth distribution of the implanted ions were observed at power densities of ≥45 mJ/cm2-pulse. On the basis of our experimental results, the onset of the threshold for bleaching of silica glass implanted with 6×1016 Bi/cm2 at 160 keV and at room temperature is between 30 and 45 mJ/cm2-pulse.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 291
Copyright
Copyright © Materials Research Society 1993

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References

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