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Optical and Structural Studies of InGaN Layers and GaN/InGaN MQWs Using TPIS-MOCVD

Published online by Cambridge University Press:  01 February 2011

Sunwoon Kim
Affiliation:
Optronix Inc., Taejon, 305-380, KOREA
Junho Seo
Affiliation:
Optronix Inc., Taejon, 305-380, KOREA
Kyuhan Lee
Affiliation:
Optronix Inc., Taejon, 305-380, KOREA
Haeseok Lee
Affiliation:
Optronix Inc., Taejon, 305-380, KOREA
Keunseop Park
Affiliation:
Optronix Inc., Taejon, 305-380, KOREA
Chang-Soo Kim
Affiliation:
KRISS, Taejon, 305-600, KOREA
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Abstract

InGaN device quality films and their related heterostructures play a critical role in the development of nitride devices. InGaN growth needs to be performed at much lower temperatures than GaN growth, due to the lower dissociation temperature of InN. Furthermore, decomposition of ammonia becomes less efficient with decreasing temperature due to high kinetic barrier for breaking N-H bonds and InGaN growth needs high NH3/TMIn ratio. We investigated the optical and structural properties of InGaN bulk layers and GaN/InGaN MQWs using thermally precracked ion supplied metalorganic chemical vapor deposition (TPISMOCVD) system. The temperature range for this study was 670 -770°C. In a low NH3 flow condition, In metal droplet appeared on the surface on InGaN layer in conventional MOCVD system, but it disappeared in TPIS-MOCVD system. An increasement of In mole fraction in InGaN could be achieved even in low NH3 flow. As the NH3 flow rate and the InGaN growth temperature decreased, In metal droplet was more effectively reduced by ammonia precracking. The quality of InGaN/GaN MQWs was evaluated with high resolution XRD and TEM.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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Optical and Structural Studies of InGaN Layers and GaN/InGaN MQWs Using TPIS-MOCVD
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