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On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces

Published online by Cambridge University Press:  10 February 2011

P. Masri ,
N. Moreaud ,
M. Averous ,
Th. Stauden ,
T. Wohner  and
J. Pezoldt
P. Masri
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, masri@intl.univ-montp2.fr
N. Moreaud
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, masri@intl.univ-montp2.fr
M. Averous
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, masri@intl.univ-montp2.fr
Th. Stauden
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
T. Wohner
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
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Abstract

3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 213
Copyright
Copyright © Materials Research Society 1999

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References

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