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On the Martensitic Transformation in V3Si

Published online by Cambridge University Press:  21 February 2011

F. Weiss
Affiliation:
E.R. 155 - C.N.R.S. - E.N.S.I.E.G. - B.P. 46 - 38402Saint Martin D'Heres - France -
O. Demolliens
Affiliation:
E.R. 155 - C.N.R.S. - E.N.S.I.E.G. - B.P. 46 - 38402Saint Martin D'Heres - France -
R. Madar
Affiliation:
E.R. 155 - C.N.R.S. - E.N.S.I.E.G. - B.P. 46 - 38402Saint Martin D'Heres - France -
M. Couach
Affiliation:
E.R. 155 - C.N.R.S. - E.N.S.I.E.G. - B.P. 46 - 38402Saint Martin D'Heres - France - SBT Lab. de Cryophysique C.E.N.G. - B.P. 85X - 38041GRENOBLE Cédex - France -
J.P. Senateur
Affiliation:
E.R. 155 - C.N.R.S. - E.N.S.I.E.G. - B.P. 46 - 38402Saint Martin D'Heres - France -
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Abstract

We demonstrate unambiguously that V5Si3 inclusions coherent with the V3Si matrix induce at low temperature a tetragonal distorsion of V3Si.

a) Polycrystalline samples are transforming only if they are two phased V3Si - V5Si3,

b) the oriented eutectic V3Si - V5Si3 undergoes a cubic - tetragonal distortion under 60K.

c) A transforming V3Si crystal is obtained by solid state epitaxy of a V5Si3 layer on the (001) plane.

These experiments support very well our idea that the distorsion can be driven by internal stresses in the samples, related to silicon over stoichiometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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