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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers

Published online by Cambridge University Press:  10 February 2011

D. Alquier
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France
N. E. B. Cowern
Affiliation:
Philips Research Lab., Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. Pichler
Affiliation:
FhG IIS-S, Schottkystrasse 10, 91058 Erlangen, Germany
C. Armand
Affiliation:
INSA, Complexe scientifique de Rangueil, 31400 Toulouse, France
A. Martinez
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France
D. Mathiot
Affiliation:
ERM/PHASE/CNRS, ENSPS, Bd. S.Brant, 67400, Illkirch, France
M. Omri
Affiliation:
CEMES/CNRS, BP 4347, 31055 Toulouse Cedex 2, France, claverie@cemes.fr
A. Claverie
Affiliation:
CEMES/CNRS, BP 4347, 31055 Toulouse Cedex 2, France, claverie@cemes.fr
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Abstract

We have studied by SIMS the diffusion of boron in Ge-preamorphised silicon over a range of anneal temperatures and times, focusing on the influence of the depth of the boron profile relative to the crystalline-amorphous (c/a) interface. It is shown that, for all durations, transient enhanced diffusion (TED) occurs on both sides of the c/a interface. For short annealing times, the amplitude of TED varies by about two orders of magnitude between the surface and the end-of-range (EOR) defect band, formed just below the original c/a interface. We propose a model in which TED arises from the coupling between a Si-interstitial supersaturated « box », the EOR defect region, whose supersaturation decreases with time as the EOR defects grow, and a surface whose recombination efficiency is close to that of a perfect sink. The model successfully describes the different behavior of deep and shallow boron profiles, without requiring the existence of a diffusion barrier.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers
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