Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-15T15:52:38.419Z Has data issue: false hasContentIssue false

Observation of Intrusion Rates of Hexamethyldisilazane During Supercritical Carbon Dioxide Functionalization of Triethoxyfluorosilane Low-k Films

Published online by Cambridge University Press:  01 February 2011

P.M. Capani
Affiliation:
Dept. of Materials Science and Engineering, University of North Texas, Denton TX 76203
P.D. Matz
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
D.W. Mueller
Affiliation:
Dept of Physics, University of North Texas, Denton TX 76203
M.J. Kim
Affiliation:
Dept of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75083
E.R. Walter
Affiliation:
Dept of Physics, University of North Texas, Denton TX 76203
J.T. Rhoad
Affiliation:
Sematech, Austin TX 78741
E.L. Busch
Affiliation:
Sematech, Austin TX 78741
R.F. Reidy
Affiliation:
Dept. of Materials Science and Engineering, University of North Texas, Denton TX 76203
Get access

Abstract

Water adsorption by porous low-k silica films results in increased dielectric constants and is often due to silanol groups on the pore surfaces. Reacting the silanols with silylating agents (e.g., hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS)) in supercritical CO2 (SC-CO2) can increase film hydrophobicity and can remove adsorbed water. In porous methylsilsesquioxane (MSQ) films (average pore size ∼ 3-4nm), it has been determined that supercritical silylation reactions do not substantially penetrate beyond the film surface.1,2 In this work we have examined the supercritical penetration behavior of silylating agents in low-k films with larger pore sizes (5-10nm). The depth and extent of reactants was determined by in situ infrared spectroscopy (FTIR), and surface hydrophobicity was examined by contact angle experiments.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Reidy, R.F., Nerusu, P.K., Chaung, E.C., R.A. Orozco-Teran, Kadam, P.P., Matz, P.D., Rhoad, J.T., Busch, E.L., Mueller, D.W., “Supercritical Pore Sealing of Porous MSQ” Advanced Metallization Conference 2004, ed. Erb, D., Ramm, P., Masu, K., Osaki, A., (MRS) p.493496 Google Scholar
2 Matz, P.D., Reidy, R. F.; Solid State Phenomena 103-104 (2005) 315322.Google Scholar
3 Cao, C., Fadeev, A.Y., and McCarthy, T.J., Langmuir 17, (2001) 757761.Google Scholar
4 Capani, P.M., Gorman, B.P., Reidy, R.F., Mueller, D.W., Walter, E.R., Matz, P.D., Rhoad, J.T., Busch, E.L., “Drying Methods for Low-k Films and their Effect on Dielectric Constants”, Advanced Metallization Conference 2004, ed. Erb, D., Ramm, P., Masu, K., Osaki, A., (MRS) p.509513.Google Scholar
5 Danel, A., Millet, C., Perrut, V., Daviot, J., V, Jousseaume, Louveau, O., Louis, D.: 2003 IEEE International Interconnect Technology Conference 2003, p. 248250.Google Scholar
6 Xie, B., Muscat, A.J., Microelectronic Engineering, 76 (2004), p.5259.Google Scholar
7 Gorman, B. P., Orozco-Teran, Rosa A., Roepsch, Jodi A., Dong, Hanjiang, Reidy, R.F., Mueller, D.W., App. Phys. Lett. 79 (2001) 40104012 Hanjiang Dong, B.P. Gorman, Zhengping Zhang, R.A. Orozco-Teran, J.A. Roepsch, D.W. Mueller, M.J. Kim, R. F. Reidy, Journal of Non-Crystalline Solids, 350 (2004) 345-350Google Scholar
8 Kazarian, S.G., Vincent, M.F., , M.F.; Eckert, C.A., Review of Scientific Instruments, 67 (1996) 1586–9Google Scholar
9 Gorman, B.P., Mueller, D. W., Reidy, R. F., Electrochemical and Solid State Letters, 6 (2003) F4041.Google Scholar