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Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy

Published online by Cambridge University Press:  31 January 2011

Koichiro Honda  and
Yasuo Cho
Koichiro Honda
Affiliation:
honda.koichiro@jp.fujitsu.com, Fusitsu Laboratories Ltd, Atsugi, Japan
Yasuo Cho
Affiliation:
cho@riec.tohoku.ac.jp, Tohoku University, Sendai, Japan
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Abstract

We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibited high performance and high resolution in observing the dopant concentration profile of transistors. In this study, good quantitative agreement between the SNDM signals and dopant density values obtained by SIMS in standard Si samples, which dopant concentrations have been calibrated. We succeeded in visualizing high-resolution dopant profiles in n- and p-type MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of transistors. Finally, we have succeeded in detecting the dopant profiles of SRAM memory cell transistors.

Keywords

dopantscanning probe microscopy (SPM)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B09-01
Copyright
Copyright © Materials Research Society 2010

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References

[1] Zavyalov, V V, McMurray, J S, and Williams, C C, J. Appl. Phys. 85 (1999) 7774 10.1063/1.370584Google Scholar
[2] Wolf, P De, Clarysse, T, Vandervorst, W, Hellemans, L, Niedermann, Ph, and Haenni, W, J. Vac. Sci.Technol. B16 (1998) 401 10.1116/1.589817Google Scholar
[3] Volkl, E and Lehmann, M, Introduction to Electron Holography, ed. Volkl, E, Joy, D, and. Allard, L A (1999 New York: Plenum)10.1007/978-1-4615-4817-1Google Scholar
[4] Cho, Y, Kirihara, A, and Saeki, T, Rev. Sci. Instrument. 67 (1996) 2297 10.1063/1.1146936Google Scholar
[5] Cho, Y, Kazuta, S, and Matsuura, K, Appl. Phys. Lett., 75 (1999) 2833 10.1063/1.125165Google Scholar
[6] Odagawa, H, and Cho, Y, Funakubo, H, and Nagashima, K, Japan. J. Appl. Phys. 39, (2000) 3808 10.1143/JJAP.39.3808Google Scholar
[7] Cho, Y, Fujimoto, K, Hiranaga, Y, Wagatsuma, Y, Onoe, A, Terabe, K, and Kitamura, K, Appl. Phys. Lett. 81 (2002) 4401 10.1063/1.1526916Google Scholar
[8] Hirose, R, Ohara, K and Cho, Y, Nanotechnology, 18 (2007) S185 10.1088/0957-4484/18/8/084014Google Scholar
[9] Honda, K and Cho, Y, Appl. Phys. Lett. 86 (2005) 013501 10.1063/1.1846147Google Scholar
[10] Honda, K, Hashimoto, S and Cho, Y, Nanotechnology 17 (2006) 084014 10.1088/0957-4484/17/7/S14Google Scholar
[11] Ishikawa, K, Honda, K and Cho, Y, Nanotechnology, 18 (2007) 084015Begin typing text here.10.1088/0957-4484/18/8/084015Google Scholar