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A Novel Patterning Method for Metal-Organic Precursors on a SiOx/Si Substrate Using a Local Electric Field

Published online by Cambridge University Press:  01 February 2011

Hiroshi Fudouzi ,
Mikihiko Kobayashi ,
Norio Shinya ,
Toyohiro Chikyow ,
Parhat Ahmet  and
Tamami Naruke
Hiroshi Fudouzi
Affiliation:
Materials Engineering Laboratory
Mikihiko Kobayashi
Affiliation:
Materials Engineering Laboratory
Norio Shinya
Affiliation:
Materials Engineering Laboratory
Toyohiro Chikyow
Affiliation:
Nanomaterials Laboratory
Parhat Ahmet
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Tamami Naruke
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Abstract

This paper demonstrates a new technique to form a patterned metal-oxide film on a silicon wafer using a local electric field. The idea of the technique involves using an interaction between metal-organic molecules dissolved in a non-polar solvent and a local electric potential field on a substrate. In this paper, an alkoxide and a metal-organic complex were used as metalorganic precursors. The precursor molecules were selectively deposited at the electrified region of the substrate. The deposited precursor films were heated with an electric furnace to form oxide films. Patterned TiOx and Sr-Ti oxide films were formed on a SiOx/Si substrate. These patterned thin films are potentially applicable to electric and optical devices. We believe that this new technique provides a new bottom-up process of molecular assembly for nanofabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 728: Symposium S – Functional Nanostructured Materials through Multiscale Assembly and Novel Patterning Techniques , 2002 , S4.10
Copyright
Copyright © Materials Research Society 2002

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