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Novel a-Si:H Thin Film High Voltage Transistor

Published online by Cambridge University Press:  28 February 2011

Hsing C. Tuan
Hsing C. Tuan*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

A new novel thin film high voltage transistor in a-Si:H is described in this paper. This new structure extends the operation of a-Si:H TFT to 500 volts or more. The fabrication process of this new high voltage transistor is simple and compatible with that of the conventional low voltage TFT. The high voltage TFT can be switched by low voltage signals and is demonstrated to be capable of switching several hundreds of volts.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 651
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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