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Nondestructive Evaluation of Dislocation Subgrain Structures in Silicon Using Thermal Wave Imaging Techniques

Published online by Cambridge University Press:  26 February 2011

William F. Regnault
William F. Regnault*
Affiliation:
Food and Drug Administration, Division of Mechanics and Materials Sciences, 12200 Wilkins Avenue, Rockville, Maryland 20852
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Abstract

Chemical sensors are being developed for in-dwelling biomedical applications. As sensor technologies progress, there is a tendency to fabricate more complex devices in a smaller area, thus enabling multiple sensors to be placed within a single in-dwelling catheter. As the active area of the detector is decreased, the defect structure of both the substrate and the various layers that make up the device plays an increasingly significant role in determining the ultimate sensitivity and reliability. A simple screening test to evaluate the viability of the substrate and the interfaces would aid in the initial evaluation of the fabricated device. To this end, thermal-wave imaging techniques have been applied to the study of a dislocation subgrain structure in a polycrystalline silicon wafer. Comparisons have been made between the results obtained using thermal-wave imaging, defect etching studies, and EBIC measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 277
Copyright
Copyright © Materials Research Society 1987

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References

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