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NMR Investigation of the Local Dopant-Hydrogen Configuration in Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

S. E. Ready  and
J. B. Boyce
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Hydrogen's role in the doping efficiency and long term stability of hydrogenated amorphous silicon is not well understood. The introduction of dopants has been observed to cause an increase in the deposition rate and in the formation of dangling bonds. We have performed NMR spin echo double resonance measurements on heavily doped amorphous silicon samples prepared via plasma deposition in order to ascertain the dopanthydrogen structural units. The resulting dopant concentrations were 2.0 and 0.5 at. % boron and/or phosphorus in compensated and singly doped material respectively. Our results indicate no direct dopant-hydrogen bonding in the compensated or n-type samples. However, in the p-type material the data indicate that approximately 40% of the boron atoms are directly bonded to a hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 153
Copyright
Copyright © Materials Research Society 1987

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