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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior
Published online by Cambridge University Press: 15 February 2011
Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G9.9
- Copyright © Materials Research Society 1999