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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

Published online by Cambridge University Press:  15 February 2011

E. Kaminska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
J. Jasinski
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
J. Kozubowski
Affiliation:
Faculty of Material Science and Eng., Warsaw Technical University, Warsaw, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
D.B. Thomson
Affiliation:
Department of Material Science and Eng., NCSU, Raleigh, NC 27695-7907, USA
R.F. Davis
Affiliation:
Department of Material Science and Eng., NCSU, Raleigh, NC 27695-7907, USA
M.D. Bremser
Affiliation:
Aixtron, Inc., Buffalo Grove, IL 60089, USA
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Abstract

Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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