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New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride

Published online by Cambridge University Press:  25 February 2011

Wayne L. Gladfelter ,
David C. Boyd ,
Jen-WeI Hwang ,
Richard T. Haasch ,
John F. Evans ,
Kwok-Lun Ho  and
Klavs F. Jensen
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
David C. Boyd
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Jen-WeI Hwang
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Richard T. Haasch
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
John F. Evans
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Kwok-Lun Ho
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

Organometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 447
Copyright
Copyright © Materials Research Society 1989

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References

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