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New Model for “Stretched Exponential” Relaxation

Published online by Cambridge University Press:  10 February 2011

Chris G. Van De Walle
Chris G. Van De Walle*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

A new model to explain stretched exponential relaxation in hydrogenated amorphous silicon is presented. The model does not invoke statistical distributions; rather, it is based on a careful treatment of diffusion, including retrapping. Excellent fits to a variety of experimental data are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 533
Copyright
Copyright © Materials Research Society 1996

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