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A New Method for Preparing Ge Nano-Crystallites Embedded in SiNY Matrices

Published online by Cambridge University Press:  28 February 2011

Kunji Chen ,
Xuexuan Qu ,
Xinfan Huang ,
Zhifeng Li  and
Duan Feng
Kunji Chen
Affiliation:
Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Xuexuan Qu
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Zhifeng Li
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Duan Feng
Affiliation:
Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
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Abstract

We report a new method for synthesizing Ge nano-crystallites embedded in SiNy film matrices. On the basis of the effect of the reactant precursors and preferential chemical bonding of Si-N and Ge-Ge, thin films with Ge clusters embedded in SiNy matrices have been prepared in the PECVD system with reactant gases of SiH4, GeH4 and NH3 mixed in the hydrogen plasma. The as-deposited films were then crystallized by Ar ion laser annealing or thermal annealing technique to form nanometer-sized Ge crystallites.

The composition and microstructures of these new type of sample were characterized by infrared absorption spectra, transmission electron microscopy, X-ray diffraction and Raman scattering spectra. The results indicated that the average size of Ge crystallites was estimated to be 2-20 nm depending on the deposition and annealing parameters and can be controlled by a designed manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 111
Copyright
Copyright © Materials Research Society 1995

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References

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